Dr Paul Kinsler.
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<> Subject: ridley cites
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<> Copyright 1997, Institute for Scientific Information Inc.
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<> Database: Science Citation Index
<>
<>
<> (1) TI: DISPERSION OF SUPERLATTICE OPTICAL PHONONS
<> AU: CONSTANTINOU_NC, ALDOSSARY_O, RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> JN: SOLID STATE COMMUNICATIONS, 1993, Vol.86, No.3, pp.191-194
<> IS: 0038-1098
<> AB: Microscopic models of longwavelength zone-centre optical modes
<> in superlattices predict an anisotropic behaviour of the dipole
<> active modes. Recent micro-Raman data has unambiguously
<> demonstrated this anisotropy for LO1 and it is shown here that
<> a continuum model that simply mixes confined LO and interface
<> modes gives very good agreement with the data.
<> KP: INTERFACE, MODES
<>
<> (2) TI: A-PERPENDICULAR-TO.P VERSUS PHI FOR COUPLING ELECTRONS TO
<> INTERFACE OPTICAL PHONONS IN QUANTUM-WELLS
<> AU: BABIKER_M, CONSTANTINOU_NC, RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1993, Vol.48, No.4,
<> pp.2236-2243
<> IS: 0163-1829
<> AB: The interface optical-phonon modes and their interaction with
<> electrons in layered semiconductor structures are considered.
<> In a canonical theory where retardation effects are retained
<> from the outset, the theory leads naturally to the quantization
<> of the free interface oscillations in the radiation gauge for
<> which the scalar potential is zero and the vector potential is
<> transverse (phi = 0, del.A = 0). The description is thus
<> entirely in terms of a transverse vector potential
<> A(perpendicular-to) which satisfies del.A(perpendicular-to) = 0
<> everywhere, except at the interfaces where, as usual, only
<> boundary conditions apply. The interaction between the two
<> subsystems (electrons and interface modes) is the well-known
<> minimal-coupling Hamiltonian which is in the form e
<> A(perpendicular-to).p/m*. The main aspects of the quantization
<> of such retarded modes are summarized. It is then shown that
<> for a double heterostructure the nonretarded vector potential
<> can be expressed in terms of the gradient of a unique field
<> operator LAMBDA which enters a unitary transformation
<> e(iLAMBDA). We demonstrate that the result of applying this
<> transformation on the total minimal-coupling Hamiltonian is the
<> unitary-equivalent Hamiltonian in which the coupling to
<> electrons is in the form ePHI. This PHI is identical to that
<> given by Mori and Ando. The matrix elements using the ePHI form
<> of coupling are then compared with those using the e
<> A(perpendicular).p/m* coupling and seen to be clearly
<> different. However, when the emission rates are evaluated using
<> the two coupling Hamiltonians, interesting and nontrivial
<> manipulations are required to prove that the same results
<> emerge for the total emission rate from any given initial
<> electronic state of the double heterostructure. The reasons for
<> the agreement of the two sets of results for first-order
<> transitions are pointed out and discussed.
<> KP: DOUBLE HETEROSTRUCTURES, FROHLICH INTERACTION, SUPERLATTICES,
<> POLARITONS
<>
<> (3) TI: INTERACTION OF ELECTRONS WITH POLARITONS
<> AU: CONSTANTINOU_NC, ALDOSSARY_O, BABIKER_M
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> JN: JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, Vol.5, No.31,
<> pp.5581-5590
<> IS: 0953-8984
<> AB: The electromagnetic (EM) waves associated with the polariton
<> modes of bulk dielectrics are quantized using a procedure that
<> accounts for both the Em and matter fields. The interaction of
<> electrons with these polariton fields is described using the
<> minimal coupling (e/m*)A . p interaction Hamiltonian where A is
<> the transverse vector potential operator of the polariton
<> field, p the electronic momentum and m* its effective mass. The
<> electron-polariton interaction in the bulk is demonstrated to
<> be closely linked to the behaviour of the polariton group and
<> phase velocities. The same quantization procedure is then
<> employed to describe the EM fields associated with the
<> interface polaritons of a GaAs/AlAs quantum well system. The
<> coupling leads to a dependence of the scattering rate on the
<> group and phase velocities of the surface modes, just as it
<> does for the bulk excitations. In contrast to the case in the
<> bulk, it is shown that these modes are important for relaxing
<> the electron energy in narrow wells.
<> KP: PHONON INTERACTION, OPTICAL PHONONS, DOUBLE HETEROSTRUCTURES,
<> QUANTUM-WELLS, SUPERLATTICES, INTERFACE
<>
<> (4) TI: SIMPLIFIED MICROSCOPIC MODEL FOR ELECTRON OPTICAL-PHONON
<> INTERACTIONS IN QUANTUM-WELLS
<> AU: BHATT_AR, KIM_KW, STROSCIO_MA, HIGMAN_JM
<> NA: N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC,27695
<> USA,RES OFF,RES TRIANGLE PK,NC,27709
<> UNIV ILLINOIS,BECKMAN INST,URBANA,IL,61801
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1993, Vol.48, No.19,
<> pp.14671-14674
<> IS: 0163-1829
<> DT: Note
<> AB: A simplified microscopic model of optical phonons in
<> dimensionally confined structures is formulated and applied to
<> calculate electron-optical-phonon scattering rates in GaAs/AlAs
<> quantum wells. For this simplified model which circumvents
<> performing a complicated ab initio calculation of the force
<> constants at the interface, it is demonstrated that the
<> resulting dispersion relation and scattering rates for
<> electron-optical-phonon interactions agree very well with those
<> obtained from detailed ab initio studies. It is also shown that
<> for GaAs/A]As structures, the macroscopic dielectric continuum
<> model provides a good approximation to the scattering rate
<> predicted by the microscopic models.
<> KP: ZINCBLENDE STRUCTURE COMPOUNDS, LATTICE-DYNAMICS, GAAS/ALAS
<> SUPERLATTICES, FORCE-CONSTANTS, HETEROSTRUCTURES, GAAS,
<> POLARIZABILITY, SCATTERING, SYSTEMS
<>
<> (5) TI: OPTICAL MODES IN GAAS ALAS SUPERLATTICES
<> AU: CHAMBERLAIN_MP, CARDONA_M, RIDLEY_BK
<> NA: MAX PLANCK INST FESTKORPERFORSCH,HEISENBERGSTR 1,D-70506
<> STUTTGART,GERMANY
<> UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1993, Vol.48, No.19,
<> pp.14356-14364
<> IS: 0163-1829
<> AB: We describe a continuum model of optical phonons in GaAs/AlAs
<> superlattices which consists of a linear combination of LO, TO,
<> and interface modes. The model describes the mixing of confined
<> and interface modes as the in-plane phonon wave vectors are
<> varied. We derive an analytical expression for the dispersion
<> relation and a detailed comparison is made with two different
<> microscopic models. Excellent agreement is found for [111]
<> superlattices and good agreement is found with [100]
<> superlattices, especially if we take into account that the
<> mechanical vibrations are not quite confined to the nominal
<> GaAs layers.
<> KP: MICRO-RAMAN SPECTROSCOPY, GAAS/ALAS SUPERLATTICES, PHONON-
<> DISPERSION, FROHLICH INTERACTION, INTERFACE PHONONS, QUANTUM
<> WELLS, CONFINED LO, SCATTERING
<>
<> (6) TI: ELASTIC-SCATTERING OF PHONONS AND INTERFACE POLARITONS IN
<> SEMICONDUCTOR HETEROSTRUCTURES
<> AU: GUPTA_R, RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1993, Vol.48, No.16,
<> pp.11972-11978
<> IS: 0163-1829
<> AB: Various mechanisms for the momentum relaxation of phonons and
<> interface polaritons (IP), in semiconductor quantum-well
<> structures, are considered. These are scattering from alloy
<> fluctuations, scattering from charged impurity centers (for LO
<> phonons and IP modes), and scattering from interface roughness
<> (IFR). While all three mechanisms can contribute significantly
<> to the elastic scattering of LO phonons, scattering from IFR is
<> the only important source for momentum relaxation of the IP
<> mode. The size of the IFR is estimated for a few samples
<> reported in the literature by assuming that IFR is responsible
<> for the difference between the experimentally measured and the
<> theoretically calculated electron mobilities. As a result, a
<> minimum interface roughness of between two and five monolayers
<> is obtained. One concludes that if scattering by IFR is the
<> dominant process limiting the low-temperature electron mobility
<> in these samples, then it is a major source for reducing the
<> drift of a nonequilibrium population of phonons and interface
<> polaritons.
<> KP: GAAS QUANTUM-WELLS, ROUGHNESS SCATTERING
<>
<> (7) TI: INTERFACE OPTICAL PHONONS NEAR PERFECTLY CONDUCTING BOUNDARIES
<> AND THEIR COUPLING TO ELECTRONS
<> AU: CONSTANTINOU_NC
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1993, Vol.48, No.16,
<> pp.11931-11935
<> IS: 0163-1829
<> AB: The interface optical phonon, are described for a GaAs/AlAs
<> system enclosed within metal (or superconductor) boundaries.
<> The requirement that the electrostatic potential associated
<> with these modes vanishes at these boundaries alters the
<> dispersion of the interface modes, especially that of the
<> antisymmetric vibrations. The interaction of electrons with
<> these modes is also considered, and a reduction in the rates is
<> obtained, in particular, when the AlAs width is less than the
<> GaAs width. As such, it is demonstrated that tampering with the
<> long-range Coulomb fields of the optical phonons by external
<> means, here by the proximity of perfectly conducting
<> interfaces, leads to a weakening of the Frohlich interaction by
<> effectively imposing a lower bound on the in-plane wave vector
<> which arises in the coupling function. This lower bound is
<> equal to the reciprocal of the AlAs width. In the special case
<> of a metal/GaAs/metal device, the carriers do not couple to
<> interface modes.
<> KP: GAAS-ALAS SUPERLATTICES, SEMICONDUCTOR HETEROSTRUCTURES,
<> QUANTUM-WELLS, LO PHONONS, EMISSION, MODES, WIRES
<>
<> (8) TI: OPTICAL-MODE HYBRIDS IN QUANTUM-WELLS, SUPERLATTICES AND SLABS
<> AU: RIDLEY_BK
<> NA: CORNELL UNIV,SCH ELECT ENGN,PHILLIPS HALL,ITHACA,NY,14853
<> UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> JN: PHYSICA SCRIPTA, 1993, Vol.T49B, pp.454-458
<> IS: 0281-1847
<> AB: The presence of interfaces causes the hybridization of LO and
<> TO modes in non-polar material and of LO, TO and interface
<> polaritons (IP) in polar material. Hybridization arises as a
<> consequence of the necessity to satisfy simultaneously
<> electromagnetic and mechanical boundary conditions. Optical
<> mode analogues of surface Rayleigh waves appear in non-polar
<> slabs, and in polar superlattices the involvement of interface
<> polaritons causes significant dispersion and anisotropy.
<> Results from a continuum theory are shown to describe
<> experimental results reasonably well. Hybridization affects the
<> quantum properties due to the coherent mixing of LO, TO and IP,
<> and this, in turn, affects the interaction with electrons.
<> Estimates of the electron-hybridon scattering rate in GaAs
<> quantum wells are presented.
<> KP: PHONON INTERACTIONS, HETEROSTRUCTURES
<>
<> (9) TI: HOT-CARRIER AND HOT PHONON EFFECTS ON HIGH-SPEED QUANTUM-WELL
<> LASERS
<> AU: TSAI_CY, EASTMAN_LF, LO_YH
<> NA: CORNELL UNIV,DEPT APPL & ENGN PHYS,ITHACA,NY,14853
<> CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY,14853
<> JN: APPLIED PHYSICS LETTERS, 1993, Vol.63, No.25, pp.3408-3410
<> IS: 0003-6951
<> AB: We present a theoretical model to analyze the hot carrier and
<> hot phonon effect on the modulation response of semiconductor
<> quantum well lasers. We find that the carrier heating strongly
<> depends on the energy relaxation time of carriers and the
<> lifetime of longitudinal-optic (LO) phonons. Furthermore, the
<> carrier heating will significantly decrease the differential
<> gain and increase the nonlinear gain coefficient and thus
<> reduce the modulation bandwidth. From the numerical result, we
<> demonstrate the bottleneck effect of the hot LO phonons on the
<> modulation response of quantum well lasers. This implies that
<> reducing the lifetime of LO phonons, for example, by doping in
<> the quantum well, will most effectively decrease the carrier
<> temperature and thus improve the modulation bandwidth.
<> KP: NONLINEAR GAIN, SEMICONDUCTOR-LASERS, RELAXATION
<>
<> (10) TI: POLAR-OPTIC PHONONS AND HIGH-FIELD ELECTRON-TRANSPORT IN
<> CYLINDRICAL GAAS/ALAS QUANTUM WIRES
<> AU: WANG_XF, LEI_XL
<> NA: CHINESE ACAD SCI,SHANGHAI INST MET,865 CHANGNING RD,SHANGHAI
<> 200050,PEOPLES R CHINA
<> CHINA CTR ADV SCI & TECHNOL,WORLD LAB,BEIJING 100080,PEOPLES R
<> CHINA
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1994, Vol.49, No.7,
<> pp.4780-4789
<> IS: 0163-1829
<> AB: Linear and nonlinear electron transport in GaAs/AlAs
<> cylindrical quantum wires is investigated with the help of the
<> balance-equation transport theory. Confined phonons, surface
<> phonons, and their Frohlich couplings with electrons in these
<> quasi-one-dimensional electron-phonon systems are described
<> using the dielectric continuum, hydrodynamic continuum, and
<> Huang-Zhu optic-phonon models, respectively. Both intrasubband
<> and intersubband transitions of up to 21 electron subbands are
<> taken into account in the numerical calculation. The comparison
<> of the results from these three models with those obtained by
<> using bulk phonon approximation shows that the bulk phonon
<> approximation is accurate enough to describe the Frohlich
<> interaction when calculating the linear and nonlinear electron
<> transport even in ultrafine GaAs/AlAs quantum wires.
<> KP: LO PHONONS, SCATTERING RATES, CONFINED LO, SEMICONDUCTOR
<> SUPERLATTICES, CONTINUUM-THEORIES, INTERFACE PHONONS, RAMAN-
<> SCATTERING, BRIEF CRITIQUE, WELLS, MODES
<>
<> (11) TI: A POLARON IN A QUANTUM-WELL WITHIN AN ELECTRIC-FIELD
<> AU: CHEN_CY, LIANG_SD, LI_M
<> NA: CCAST,WORLD LAB,CTR THEORET PHYS,POB 8730,BEIJING
<> 100080,PEOPLES R CHINA
<> GUANGZHOU TEACHERS COLL,DEPT PHYS,CANTON 510400,PEOPLES R CHINA
<> S CHINA NORMAL UNIV,DEPT PHYS,CANTON 510631,PEOPLES R CHINA
<> JN: JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, Vol.6, No.10,
<> pp.1903-1912
<> IS: 0953-8984
<> AB: The ground-state energy and effective mass of a polaron in the
<> quantum well (QW) of an AlAs/GaAs double heterostructure (DHS)
<> are calculated as functions of the well width and the strength
<> of the electric field applied along the growth direction. Every
<> type of optical phonon mode that can exist in the DHS within
<> the continuous model is considered separately. It is found that
<> the contribution of the interface phonon to the polaron effect
<> is much larger than that of the confined bulk phonon modes in
<> QWS with width d < 50 angstrom and then falls quickly with
<> increasing well width up to d congruent-to 200 angstrom. An
<> electric field has hardly any influence on polaron effects in
<> Qws with width d < 50 angstrom, but when d > 50 angstrom the
<> influence becomes much stronger. The correction of the ground-
<> state energy and effective mass originating from LO modes
<> decreases and that from the interface modes increases with
<> increasing strength of the electric field.
<> KP: HETEROSTRUCTURES, SCATTERING, SINGLE, ENERGY, SUPERLATTICES,
<> LUMINESCENCE, PHONONS, MODES, MASS, GAS
<>
<> (12) TI: HOT-ELECTRON RELAXATION VIA THE EMISSION OF GAAS OPTICAL MODES
<> AND ALAS INTERFACE MODES IN GAAS ALAS MULTIQUANTUM WELLS
<> AU: OZTURK_E, CONSTANTINOU_NC, STRAW_A, BALKAN_N, RIDLEY_BK,
<> RITCHIE_DA, LINFIELD_EH, CHURCHILL_AC, JONES_GAC
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
<> JN: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, Vol.9, No.5 SS,
<> pp.782-785
<> IS: 0268-1242
<> AB: We demonstrate via hot-electron photoluminescence and high-
<> temperature mobility measurements the importance of the AlAs
<> interface mode in the energy relaxation of electrons in
<> GaAs/AlAs multi-quantum wells. A corresponding investigation of
<> a similar GaAs/Al0.24Ga0.76As system illustrates that this is
<> not the case for AlGaAs barrier devices where GaAs modes are
<> the dominant energy relaxation process. The importance of the
<> AlAs interface mode is not simply related to its intrinsic
<> scattering rate but also to its shorter lifetime (compared with
<> GaAs modes). Hot-phonon effects are therefore crucial to a full
<> understanding of the experimental data.
<> KP: DOUBLE HETEROSTRUCTURES, PHONON INTERACTIONS, TRANSPORT
<>
<> (13) TI: ENERGY AND MOMENTUM RELAXATION RATES FOR CONFINED AND INTERFACE
<> MODES IN QUANTUM-WELL STRUCTURES
<> AU: GUPTA_R, RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,WIVENHOE PK,COLCHESTER CO4
<> 3SQ,ESSEX,ENGLAND
<> JN: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, Vol.9, No.5 SS,
<> pp.753-755
<> IS: 0268-1242
<> AB: In GaAs/AlAs quantum well structures both the confined GaAs
<> optic phonon and the AlAs interface polariton (IP) mode
<> contribute to the energy and momentum relaxation of hot
<> electrons. It has been shown that in real multiple quantum well
<> structures elastic scattering of phonons can lead to a non-
<> drifting population of hot phonons, which results in a
<> suppression of the high-field electron drift velocity. The
<> consequences for device application are obvious. The non-drift
<> of the mode is determined by the relative magnitudes of its
<> energy and momentum relaxation rates.
<> We present a calculation of the lifetime and the elastic
<> scattering rates for confined and interface modes in GaAs/AlAs
<> quantum wells. It is found that the decay rates of the two
<> modes exhibit different well-width dependences, and that
<> scattering from interface roughness is the dominant mechanism
<> for momentum relaxation. The implications for high-field
<> transport are discussed.
<> KP: SCATTERING
<>
<> (14) TI: OPTICAL MODES IN GAAS ALAS SUPERLATTICES
<> AU: CHAMBERLAIN_MP, CARDONA_M
<> NA: MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY
<> JN: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, Vol.9, No.5 SS,
<> pp.749-752
<> IS: 0268-1242
<> AB: We outline a continuum model of optical modes in GaAs/AlAs
<> superlattices with particular emphasis on the modes vibrating
<> in the AlAs restrahl band. Results are given for the AlAs modes
<> of [100] and [111] superlattices and are shown to give
<> excellent agreement with a microscopic model. We also
<> demonstrate the effect of using the mass approximation on the
<> dispersion of the superlattice modes.
<> KP: ELECTRON-PHONON INTERACTION, GAAS-ALAS SUPERLATTICES, SPECTRA
<>
<> (15) TI: OPTICAL-PHONON TUNNELING
<> AU: RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,WIVENHOE PK,COLCHESTER CO4
<> 3SQ,ESSEX,ENGLAND
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1994, Vol.49, No.24,
<> pp.17253-17258
<> IS: 0163-1829
<> AB: LO phonons in polar material can tunnel resonantly through a
<> rigid barrier provided that they can excite an interface
<> polariton. A theory of phonon tunneling based on a macroscopic
<> continuum model is presented. The ability of LO phonons to be
<> transmitted is shown to be dependent upon there being
<> sufficient dispersion for the LO frequency band to overlap
<> significantly the ''classical'' dispersion of interface modes.
<> The interaction with electrons in the barrier is discussed. It
<> is also shown that interface modes appear in their own right
<> only in the frequency range below the LO band but above
<> omega(TO).
<> KP: GAAS-ALAS SUPERLATTICES, LATTICE-DYNAMICS, QUANTUM-WELL, MODES,
<> HETEROSTRUCTURES, VIBRATIONS, SYSTEMS
<>
<> (16) TI: EFFECT OF BULK DISPERSION ON THE ELECTRON OPTICAL-PHONON
<> INTERACTION IN A SINGLE-QUANTUM-WELL
<> AU: CONSTANTINOU_NC, RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1994, Vol.49, No.24,
<> pp.17065-17071
<> IS: 0163-1829
<> AB: The interaction of electrons with GaAs optical phonons is
<> investigated for a single GaAs/AlAs quantum well using the
<> hybrid model of optical phonons, which incorporates bulk-mode
<> dispersion. We predict resonances in the individual hybrid
<> scattering rates as a function of well width corresponding to
<> wave vectors where the modes anticross. Nevertheless, although
<> the physics is quite different, we find that the total
<> scattering rate is insensitive to the value of the bulk
<> dispersion, and is given to an excellent approximation by the
<> dielectric continuum model, for both intrasubband and
<> intersubband scattering processes. We conclude, in accord with
<> recent results of lattice dynamics, that for the evaluation of
<> scattering rates, the dielectric continuum model provides a
<> very good approximation.
<> KP: GAAS-ALAS SUPERLATTICES, SEMICONDUCTOR HETEROSTRUCTURES, RAMAN-
<> SCATTERING, CONFINED LO, MODES, SYSTEMS, REDUCTION
<>
<> (17) TI: A SIMPLE DESCRIPTION OF FROHLICH INTERACTION IN CYLINDRICAL
<> GAAS/ALAS QUANTUM WIRES
<> AU: WANG_XF, LEI_XL
<> NA: CHINESE ACAD SCI,SHANGHAI INST MET,865 CHANGNING RD,SHANGHAI
<> 200050,PEOPLES R CHINA
<> JN: SOLID STATE COMMUNICATIONS, 1994, Vol.91, No.7, pp.513-517
<> IS: 0038-1098
<> AB: A simple analytical description of electron-optic-phonon
<> coupling in cylindrical GaAs/AlAs quantum wires is presented
<> and electron transport in these systems is studied. In the in-
<> line wave vector range of interest to Frohlich interaction, the
<> confined phonon modes of this model are almost the same as
<> those from the recently developed hybridiztion theory. Confined
<> phonon limited electron mobility calculated from two models are
<> found to be the same. Finally, transport criterion for judging
<> whether or not independent interface phonon modes exist is
<> suggested.
<> KP: OPTICAL-PHONON MODES, INTERFACE PHONONS, SCATTERING,
<> SEMICONDUCTOR, SUPERLATTICES, WELL
<>
<> (18) TI: SPACE-CHARGE-MEDIATED CAPTURE OF ELECTRONS AND HOLES IN A
<> QUANTUM-WELL
<> AU: RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY,14853
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1994, Vol.50, No.3,
<> pp.1717-1724
<> IS: 0163-1829
<> AB: Unequal quantum-well capture rates of electrons and holes give
<> rise to the accumulation of space charge which accelerates the
<> capture of electrons and retards the capture of holes. This
<> case is analyzed for the GaAs/Ga0.7In0.3As single-quantum-well
<> system using two optical-phonon spectra: (a) bulk spectrum in
<> both barrier and well, and (b) bulk spectrum in the barrier,
<> confined hybrids in the well. Phonon confinement reduces the
<> capture rate significantly. Equilibrated resonant capture times
<> for a 50-angstrom well obtained are for bulk modes and for bulk
<> and/or confined modes.
<> KP: CARRIER CAPTURE, OPTICAL PHONONS, SUPERLATTICES
<>
<> (19) TI: ELECTRON-PHONON SCATTERING IN GA1-XALXAS QUANTUM-WELL
<> STRUCTURES IN AN ELECTRIC-FIELD
<> AU: ZHU_JL, DUAN_WH, GU_BL
<> NA: TSING HUA UNIV,DEPT PHYS,BEIJING 100084,PEOPLES R CHINA
<> CHINESE CTR ADV SCI & TECHNOL,WORLD LAB,CTR THEORET
<> PHYS,BEIJING 100080,PEOPLES R CHINA
<> CENT IRON & STEEL RES INST,BEIJING 100081,PEOPLES R CHINA
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1994, Vol.50, No.8,
<> pp.5473-5479
<> IS: 0163-1829
<> AB: Effects of the well width and an electric field on electron-
<> phonon scattering are studied for two kinds of quantum-well
<> structures. One is a symmetrical single quantum well (SSQW)
<> Ga0.6Al0.4As/GaAs/Ga0.6Al0.4As, and the other is an
<> asymmetrical single quantum well (ASQW) Ga0.6Al0.4As/GaAs-
<> Ga0.8Al0.2As/Ga0.6Al0.4As. Calculated results reveal that for
<> both structures without an electric field, the intrasubband and
<> intersubband scattering rates due to interface phonons,
<> respectively, decrease and increase with increasing well width
<> while those due to confined phonons increase with increasing
<> well width. It is found that the difference between SSQW and
<> ASQW structures results in a significant change of phonon modes
<> and electronic structure and consequently the dependence of
<> scattering rates on an applied electric field is quite
<> different for the two structures, and that the intersubband
<> scattering rates can be considerably changed by applied
<> electric field as the well width is large. The result would be
<> useful for analyzing experimental results and designing some
<> devices in the future.
<> KP: PHOTOCURRENT SPECTROSCOPY, CONFINED LO, GAAS, EXCITONS,
<> HETEROSTRUCTURES, POLARIZABILITY, SUPERLATTICES, VIBRATIONS,
<> MODEL, RATES
<>
<> (20) TI: PHONON-SCATTERING SUPPRESSION IN SHORT PERIODIC ALAS/GAAS
<> MULTIPLE-QUANTUM-WELL STRUCTURES
<> AU: LETRAN_TT, SCHAFF_WJ, RIDLEY_BK, CHEN_YP, CLARK_A, EASTMAN_LF
<> NA: CORNELL UNIV,SCH ELECT ENGN,PHILLIPS HALL,ITHACA,NY,14853
<> JN: JOURNAL OF APPLIED PHYSICS, 1994, Vol.75, No.7, pp.3491-3499
<> IS: 0021-8979
<> AB: The suppression of longitudinally polarized optical-phonon
<> (LOP) electron scattering in multiple quantum wells (MQWs) was
<> sought in short periodic AlAs/GaAs with well widths of 12, 15,
<> and 20 monolayers and AlAs barrier widths of 2 and 4
<> monolayers, based on a study of electron mobility in the plane
<> of the MQW. Two-dimensional electron-gas structures with MQWs
<> of up to eight wells in their channel were grown. Their
<> mobilities at room temperature were slightly reduced, as
<> compared to samples without MQW channel, due to interaction
<> with interface polaritons from AlAs barriers, while mobility at
<> temperatures < 50 K improved due to reduction of remote ionized
<> impurity scattering. The theoretical analysis of the results
<> based on the model of hybridon-electron interaction in an
<> infinite superlattice is presented. The reduction of room-
<> temperature mobility in the MQWs is believed to be caused by
<> the interaction of electrons with both barrier interface-
<> polariton (IP) -like modes and the well LOP-IP hybrids. An
<> alternative explanation of the results of a similar experiment
<> done elsewhere is offered denying the evidence of strong
<> suppression of LOP scattering there.
<> KP: OPTICAL PHONONS, SUPERLATTICES, MOBILITY
<>
<> (21) TI: CONTINUUM MODEL OF THE OPTICAL MODES OF VIBRATION OF AN IONIC-
<> CRYSTAL SLAB
<> AU: RIDLEY_BK, ALDOSSARY_O, CONSTANTINOU_NC, BABIKER_M
<> NA: UNIV ESSEX,DEPT PHYS,WIVENHOE PK,COLCHESTER CO4
<> 3SQ,ESSEX,ENGLAND
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1994, Vol.50, No.16,
<> pp.11701-11709
<> IS: 0163-1829
<> AB: Optical vibrations of a thin ionic slab are described by a
<> macroscopic theory involving the hybridization of LO, TO, and
<> interface-polariton modes. The resultant modes are triple
<> hybrids, which satisfy both elastic and electromagnetic
<> boundary conditions at the two surfaces. Analytic expressions
<> are derived for the relative ionic displacements and related
<> electric fields, and for the dispersion relations, assuming
<> elastic isotropy and neglecting retardation effects. Comparison
<> of mode patterns with those obtained by Fuchs and Kliewer, who
<> used electromagnetic boundary conditions only, show that Fuchs-
<> Kliewer modes are a good approximation to the system of the
<> triple-hybrid modes our theory describes.
<> KP: ELECTRON-PHONON INTERACTION, GAAS-ALAS SUPERLATTICES, QUANTUM-
<> WELLS, DOUBLE HETEROSTRUCTURES, FROHLICH INTERACTION,
<> DISPERSION, SCATTERING
<>
<> (22) TI: ANGULAR-DISPERSION OF CONFINED OPTICAL PHONONS IN GGAS/ALAS
<> SUPERLATTICES STUDIED BY MICRO-RAMAN SPECTROSCOPY
<> AU: ZUNKE_M, SCHORER_R, ABSTREITER_G, KLEIN_W, WEIMANN_G,
<> CHAMBERLAIN_MP
<> NA: TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY
<> MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY
<> JN: SOLID STATE COMMUNICATIONS, 1995, Vol.93, No.10, pp.847-851
<> IS: 0038-1098
<> AB: Microscopic Raman measurement of the GaAs-like optical phonons
<> of (001)-(GaAS)(8)/(AlAs)(8) and -(GaAs)(12)/(AlAs)(12)
<> superlattices are presented. The phonon dispersion with respect
<> to the angle 8 between growth axis of the superlattice and the
<> phonon wavevector is investigated over the whole range from 0
<> degrees to 90 degrees by scattering from surfaces which were
<> polished under various angles. It is found that the frequencies
<> of confined modes with even symmetry remain constant, whereas
<> the modes with odd symmetry are shifted downwards in frequency
<> with increasing Theta. Frequency gaps in the angular dispersion
<> due to mode anti-crossing are observed. The experimental data
<> are in reasonable agreement with calculations performed within
<> a recently developed continuum model based on linear
<> combinations of LO, TO and interface modes.
<> KP: GAAS-ALAS SUPERLATTICES, GAAS/ALAS SUPERLATTICES, QUANTUM-WELLS,
<> LATTICE-DYNAMICS, LO PHONONS, INTERFACE, SCATTERING, SPECTRA,
<> MODES, ANISOTROPY
<> WA: QUANTUM WELLS, SEMICONDUCTORS, PHONONS
<>
<> (23) TI: POLAR OPTICAL OSCILLATIONS IN QUANTUM WIRES AND FREESTANDING
<> WIRES - THE ELECTRON-PHONON INTERACTION HAMILTONIAN
<> AU: COMAS_F, CANTARERO_A, TRALLEROGINER_C, MOSHINSKY_M
<> NA: UNIV VALENCIA,DEPT FIS APLICADA,DR MOLINER 50,E-46100
<> BURJASSOT,SPAIN
<> MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY
<> UNIV HAVANA,DEPT THEORET PHYS,HAVANA,CUBA
<> UNIV NACL AUTONOMA MEXICO,INST FIS,MEXICO CITY 01000,DF,MEXICO
<> JN: JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, Vol.7, No.9,
<> pp.1789-1805
<> IS: 0953-8984
<> AB: By applying a phenomenological theory for long-wavelength polar
<> optical oscillations to mesoscopic layered semiconductor
<> structures, we calculate the normal modes of a quantum wire and
<> of a free-standing wire. the cylindrical geometry is adopted
<> with circular cross-section of radius r(0). The displacement
<> held u and the electric potential phi are calculated for the
<> different modes, as well as the dispersion relation curves. The
<> case of the GaAs/AlAs structure is analysed. We limit ourselves
<> to the study of oscillations perpendicular to the wire axis.
<> The electron-phonon interaction Hamiltonian is derived for the
<> present problem using the second-quantization formalism.
<> KP: GAAS-ALAS SUPERLATTICES, SEMICONDUCTOR SUPERLATTICES, GAAS/ALAS
<> SUPERLATTICES, DOUBLE HETEROSTRUCTURES, RAMAN-SCATTERING,
<> LATTICE-DYNAMICS, CONFINED LO, MODES, SYSTEMS, WELLS
<>
<> (24) TI: CHEMICAL-COMPOSITION FLUCTUATIONS AT INTERFACES IN QUANTUM-WELL
<> STRUCTURES - EFFECT ON INTERFACE-PHONON MODES
<> AU: DUAN_WH, ZHU_JL, GU_BL, WANG_CY
<> NA: CHINA CTR ADV SCI & TECHNOL,CTR THEORET PHYS,WORLD LAB,POB
<> 8730,BEIJING 100080,PEOPLES R CHINA
<> TSING HUA UNIV,DEPT PHYS,BEIJING 100084,PEOPLES R CHINA
<> CENT IRON & STEEL RES INST,BEIJING 100081,PEOPLES R CHINA
<> JN: PHYSICS LETTERS A, 1995, Vol.200, No.3-4, pp.329-334
<> IS: 0375-9601
<> AB: On the basis of the dielectric continuum model, the optical
<> phonon modes and related dispersion relations in GaAs-Ga1-
<> xAlxAs quantum well structures with chemical composition
<> fluctuations at the interfaces are investigated. The dependence
<> of the modes on chemical composition fluctuations and their
<> symmetry is clearly demonstrated.
<> KP: SEMICONDUCTOR HETEROSTRUCTURES, ELECTRONIC POLARIZABILITY,
<> SCATTERING, EXCITONS, SINGLE, FIELD
<>
<> (25) TI: OPTICAL PHONONS IN A QUANTUM-WELL CONTAINING MONOLAYERS
<> AU: RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY,14853
<> JN: APPLIED PHYSICS LETTERS, 1995, Vol.66, No.26, pp.3633-3635
<> IS: 0003-6951
<> KP: SUPERLATTICES, MODES
<>
<> (26) TI: RAMAN-SCATTERING DUE TO INTERFACE OPTICAL PHONONS IN GAAS/ALAS
<> MULTIPLE-QUANTUM WELLS
<> AU: SHIELDS_AJ, CHAMBERLAIN_MP, CARDONA_M, EBERL_K
<> NA: TOSHIBA CAMBRIDGE RES CTR,260 SCI PK,MILTON RD,CAMBRIDGE CB4
<> 4WE,ENGLAND
<> MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1995, Vol.51, No.24,
<> pp.17728-17739
<> IS: 0163-1829
<> KP: GAAS-ALAS SUPERLATTICES, CONFINED LO PHONONS, GAAS-ALXGA1-XAS
<> SUPERLATTICES, MICROSCOPIC THEORY, ANISOTROPY, DISPERSION,
<> SPECTRA, SYSTEMS, MODES
<>
<> (27) TI: FOUNDATIONS OF THE ENVELOPE-FUNCTION THEORY FOR PHONONS IN
<> HETEROSTRUCTURES
<> AU: FOREMAN_BA
<> NA: UNIV ESSEX,DEPT PHYS,WIVENHOE PK,COLCHESTER CO4
<> 3SQ,ESSEX,ENGLAND
<> CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY,14853
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1995, Vol.52, No.16,
<> pp.12260-12281
<> IS: 0163-1829
<> AB: A one-dimensional envelope-function model is developed for the
<> treatment of long-wavelength optical phonons in InAs/GaSb and
<> related superlattices. The long-wavelength model is derived
<> from an exact envelope-function formalism that is fully
<> equivalent to the standard force-constant model of discrete
<> lattice dynamics. Two new interface-related terms appear in the
<> analysis, neither of which is included in current
<> phenomenological models for GaAs/AlAs superlattices. The first
<> describes the change in reduced mass at the interface, and is
<> important for both longitudinal and transverse vibrations; the
<> second describes the change in the optical force constant at
<> the interface, and is important primarily for transverse
<> vibrations. A comparison of the continuum model with discrete
<> calculations shows good numerical agreement for all long-
<> wavelength modes, including those modes which are tightly bound
<> to the interfaces.
<> KP: GAAS-ALAS SUPERLATTICES, POLAR OPTICAL MODES, RESONANCE RAMAN-
<> SCATTERING, GAAS/ALAS SUPERLATTICES, SEMICONDUCTOR
<> SUPERLATTICES, INAS/GASB SUPERLATTICES, INTERFACE PHONONS,
<> CONFINED LO, DISPERSION, ANISOTROPY
<>
<> (28) TI: CARRIER ENERGY RELAXATION-TIME IN QUANTUM-WELL LASERS
<> AU: TSAI_CY, TSAI_CY, LO_YH, EASTMAN_LF
<> NA: DE MONTFORT UNIV,SCH ENGN & MANUFACTURE,EMERGING TECHNOL RES
<> CTR,LEICESTER LE1 9BH,LEICS,ENGLAND
<> CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY,14853
<> UNIV STUTTGART,INST PHYS,D-70550 STUTTGART,GERMANY
<> JN: IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, Vol.31, No.12,
<> pp.2148-2158
<> IS: 0018-9197
<> AB: Carrier energy relaxation via carrier-polar optical phonon
<> interactions with hot phonon effects in multisubband quantum-
<> well structures is theoretically studied by using both bulk
<> longitudinal optical phonons and confined longitudinal optical
<> phonons. We find that the width and the depth of quantum wells
<> only have moderate effects on carrier energy relaxation rates,
<> Our results also indicate that the difference of energy
<> relaxation rates between the quantum well and the bulk material
<> is not significant, We investigate the effects of longitudinal
<> optical phonon lifetimes on the carrier energy relaxation rate,
<> Neglect of the finite decay time of longitudinal optical
<> phonons mill significantly underestimate the carrier energy
<> relaxation time; this not only contradicts the experimental
<> results but also severely underestimates the nonlinear gain
<> coefficient due to carrier heating, The implications of our
<> theoretical results in designing high-speed quantum-well lasers
<> are discussed.
<> KP: ELECTRON-PHONON INTERACTION, NONEQUILIBRIUM LO PHONONS, POLAR
<> SEMICONDUCTORS, NONLINEAR GAIN, HOT CARRIERS, SUPERLATTICES,
<> SCATTERING, HETEROSTRUCTURES, SINGLE, MODES
<>
<> (29) TI: THE INTERACTION OF ELECTRONS WITH OPTICAL PHONONS IN EMBEDDED
<> CIRCULAR AND ELLIPTIC GAAS QUANTUM WIRES
<> AU: BENNETT_CR, CONSTANTINOU_NC, BABIKER_M, RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> JN: JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, Vol.7, No.50,
<> pp.9819-9831
<> IS: 0953-8984
<> AB: We consider electronic intrasubband transitions involving the
<> confined and interface optical phonons of circular and
<> elliptical GaAs quantum wires. Detailed treatments are given
<> for a GaAs wire embedded in AIAs where the electrons are
<> confined via an infinite potential barrier. The optical phonons
<> are described using the dielectric continuum (DC) model, which
<> for the GaAs/AIAs system compares favourably with more
<> sophisticated macroscopic models and ab initio microscopic
<> calculations in its prediction for the total scattering rates.
<> The DC model has been applied previously to the circular case,
<> but here we evaluate the rates analytically. It is shown that
<> the behaviour of the electrons and phonons in elliptical wires
<> is both quantitatively and qualitatively different from that in
<> circular wires, especially as regards angular properties.
<> KP: INTERFACE PHONONS, SCATTERING RATES, LO PHONONS, WELLS,
<> HETEROSTRUCTURES, SYSTEMS, ALAS
<>
<> (30) TI: HEAVY-HOLE SCATTERING BY CONFINED NONPOLAR OPTICAL PHONONS IN A
<> SINGLE SI1-XGEX/SI QUANTUM-WELL
<> AU: SUN_G, FRIEDMAN_L
<> NA: UNIV MASSACHUSETTS,ENGN PROGRAM,BOSTON,MA,02125
<> ROME LAB,EROC,BEDFORD,MA,01731
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1996, Vol.53, No.7,
<> pp.3966-3974
<> IS: 0163-1829
<> AB: Intrasubband and intersubband scattering rates of heavy holes
<> are obtained due to confined nonpolar optical phonons in a Si1-
<> xGex quantum well with Si barriers. Guided and interface Ge-Si
<> and Ge-Ge modes and unconfined Si-Si modes are considered. A
<> continuum model is used for the two components of the ionic
<> displacement of confined vibrations: the uncoupled s-polarized
<> TO mode and the hybrid of the LO and p-polarized TO modes. The
<> guided mode is obtained using the model of a quantum well with
<> infinitely rigid barriers and the interface mode is derived
<> from the hydrodynamic boundary conditions. While the total
<> intersubband scattering rates are reduced as a result of
<> confinement, the opposite is found for the intrasubband
<> scattering. Depending on the well width and Ge content, the
<> intersubband scattering rates are reduced by a factor of 2-4
<> with respect to their values for no confinement. Thus one would
<> expect comparable enhancement in the intersubband lifetimes
<> crucial to the population inversion in a Si1-xGex/Si
<> intersubband laser.
<> KP: GAAS-ALAS SUPERLATTICES, SEMICONDUCTOR HETEROSTRUCTURES,
<> ELECTRON, MODES
<>
<> (31) TI: INFLUENCE OF ELECTRIC AND MAGNETIC-FIELDS ON THE POLARON IN A
<> QUANTUM-WELL
<> AU: LIANG_SD, CHEN_CY, HUANG_ZH
<> NA: GUANGZHOU TEACHERS COLL,DEPT PHYS,GUANGZHOU 510400,PEOPLES R
<> CHINA
<> CCAST,WORLD LAB,BEIJING 100080,PEOPLES R CHINA
<> JN: COMMUNICATIONS IN THEORETICAL PHYSICS, 1996, Vol.25, No.4,
<> pp.427-434
<> IS: 0253-6102
<> AB: A combinative method of variational wavefunction and harmonic
<> oscillator operator algebra, the ground-state energy correction
<> to an electron confined in the quantum well of GaAs/Ga1-xAlxAs
<> in the electric and magnetic fields dong the growth axis has
<> been studied by taking into account the interaction of
<> different optical phonon modes with the electron. The ground-
<> state energy is obtained as a function of the well width and
<> the strength of electric and magnetic fields. The results show
<> that the magnetic field greatly enhances the interface-phonon
<> part of the polaronic correction to electron ground-state
<> energy in the well width d less than or equal to 300 Angstrom.
<> The electric field also enhances the polaron effect of
<> interface mode, but decreases the part of bulk longitudinal
<> mode.
<> KP: CYCLOTRON-RESONANCE, DOUBLE HETEROSTRUCTURE, INTERFACE-PHONON,
<> MODES, CRYSTALS, ENERGY, SLAB
<>
<> (32) TI: Polar scattering of 2-dimensional electrons in quantum holes.
<> LA: Russian
<> AU: Mirlin_DN, Rodina_AV
<> NA: AF IOFFE PHYS TECH INST,POLITEKHNICHESKAYA 26,ST PETERSBURG
<> 194021,RUSSIA
<> JN: FIZIKA TVERDOGO TELA, 1996, Vol.38, No.11, pp.3201-3211
<> IS: 0367-3294
<> KP: OPTICAL-PHONON INTERACTION, WELL STRUCTURES, MICROSCOPIC
<> CALCULATION, DOUBLE HETEROSTRUCTURES, FROHLICH INTERACTION,
<> SUPERLATTICES, LUMINESCENCE, SYSTEMS, MODES
<>
<> (33) TI: Electron scattering by optical phonons in AlxGa1-
<> xAs/GaAs/AlxGa1-xAs quantum wells
<> AU: Zianni_X, Simserides_CD, Triberis_GP
<> NA: UNIV ATHENS,DEPT PHYS,SECT SOLID STATE PHYS,ZOGRAFOS
<> 15784,ATHENS,GREECE
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1997, Vol.55, No.24,
<> pp.16324-16330
<> IS: 0163-1829
<> AB: The scattering of a quasi two-dimensional electron gas by
<> optical phonons in selectively doped AlxGa1-xAs/GaAs/AlxGa1-xAs
<> quantum wells is systematically studied in order to determine
<> the effect of phonon confinement. The electron states are
<> calculated solving self-consistently Schrodinger and Poisson
<> equations to obtain an accurate dependence upon the structure
<> parameters and the temperature. We study the way the scattering
<> is affected by the form of the phonons calculating the mobility
<> using three models for the phonons. They are considered: (a) as
<> three dimensional (3D), (b) as a set of confined and interface
<> phonons, and (c) as the normal modes of the heterostructure.
<> The relaxation times for the electron energy subbands are
<> calculated solving the system of Boltzmann equations. The
<> effect of the temperature and the well width variation is also
<> investigated. The results are in a good agreement with
<> experimental measurements. The agreement is only slightly
<> dependent on the model used for the phonons and becomes best
<> when the effect of the heterostructure on the phonon modes is
<> taken into account.
<> KP: HETEROSTRUCTURES, MODULATION, MOBILITY
<>
<> (34) TI: Polar optical modes in semiconductor nanostructures
<> AU: Velasco_VR, GarciaMoliner_F
<> NA: CSIC,INST CIENCIA MAT,E-28049 MADRID,SPAIN
<> UNIV JAUME I,CATEDRA CIENCIA CONTEMPORANEA,CASTELLO DE PLANA
<> 12071,SPAIN
<> JN: SURFACE SCIENCE REPORTS, 1997, Vol.28, No.5-6, pp.125-176
<> IS: 0167-5729
<> DT: Review
<> AB: Polar optical modes play an important role in electron-phonon
<> processes such as scattering rates, polaron effects and
<> resonant Raman scattering in quantum wells and superlattices,
<> Because of this there has been in recent years a strong
<> interest in the development of a long-wave theory for optical
<> modes in semiconductor nanostructures. This theory would be the
<> equivalent of the effective mass theory for electrons. Besides
<> microscopic calculations it should provide a satisfactory
<> theoretical model to study the long-wave limit, to which most
<> experimental evidence is circumscribed. Important elements in
<> this type of theory are the inclusion of the bulk spatial
<> dispersion of the optical modes together with the fact that, at
<> an interface between two media, mechanical and electromagnetic
<> boundary conditions must be satisfied, In some cases, like
<> InAs/GaSb and related superlattices, the details of the
<> interface structure are also important. We discuss here the
<> different approaches employed to study the long-wave limit in
<> these systems, including other approaches in which the envelope
<> function model is derived directly from microscopic lattice
<> dynamics.
<> KP: ELECTRON-PHONON INTERACTION, GAAS-ALAS SUPERLATTICES, ENERGY-
<> LOSS SPECTRUM, PLANAR VIBRATIONAL-MODES, RECTANGULAR QUANTUM
<> WIRE, RAMAN-SCATTERING, GAAS/ALAS SUPERLATTICES, CONFINED LO,
<> INTERFACE MODES, RESONANT RAMAN
<> WA: phonons, heterostructures, quantum wells, superlattices
<>
<> **** End of Data ****
<>
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<> Date: Mon, 22 Sep 1997 15:35:19 +0100
<> Message-Id: <97092215351907@alpha1.bids.ac.uk>
<> To: P.Kinsler%elec-eng.leeds.ac.uk@bids.ac.uk
<> Subject: ISI Results - 1997/09/22 at 15:35:18
<> X-VMS-To: P.Kinsler@elec-eng.leeds.ac.uk
<> Content-Type: text
<> Content-Length: 1550
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<>
<> Copyright 1997, Institute for Scientific Information Inc.
<>
<> Database: Science Citation Index
<>
<>
<> (1) TI: OPTICAL-PHONON TUNNELING
<> AU: RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,WIVENHOE PK,COLCHESTER CO4
<> 3SQ,ESSEX,ENGLAND
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1994, Vol.49, No.24,
<> pp.17253-17258
<> IS: 0163-1829
<> AB: LO phonons in polar material can tunnel resonantly through a
<> rigid barrier provided that they can excite an interface
<> polariton. A theory of phonon tunneling based on a macroscopic
<> continuum model is presented. The ability of LO phonons to be
<> transmitted is shown to be dependent upon there being
<> sufficient dispersion for the LO frequency band to overlap
<> significantly the ''classical'' dispersion of interface modes.
<> The interaction with electrons in the barrier is discussed. It
<> is also shown that interface modes appear in their own right
<> only in the frequency range below the LO band but above
<> omega(TO).
<> KP: GAAS-ALAS SUPERLATTICES, LATTICE-DYNAMICS, QUANTUM-WELL, MODES,
<> HETEROSTRUCTURES, VIBRATIONS, SYSTEMS
<>
<> (2) TI: OPTICAL PHONONS IN A QUANTUM-WELL CONTAINING MONOLAYERS
<> AU: RIDLEY_BK
<> NA: UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
<> CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY,14853
<> JN: APPLIED PHYSICS LETTERS, 1995, Vol.66, No.26, pp.3633-3635
<> IS: 0003-6951
<> KP: SUPERLATTICES, MODES
<>
<> **** End of Data ****
<>
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