Dr Paul Kinsler.
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<> Copyright 1997, Institute for Scientific Information Inc.
<>
<> Database: Science Citation Index
<>
<>
<> (1) TI: PHONONS IN THIN GAAS QUANTUM WIRES
<> AU: ROSSI_F, ROTA_L, BUNGARO_C, LUGLI_P, MOLINARI_E
<> NA: UNIV MODENA,DIPARTIMENTO FIS,VIA CAMPI 213-A,I-41100
<> MODENA,ITALY
<> UNIV ROMA TOR VERGATA,DIPARTIMENTO INGN ELETTRON,I-00173
<> ROME,ITALY
<> CNR,IST OM CORBINO,I-00189 ROME,ITALY
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1993, Vol.47, No.3,
<> pp.1695-1698
<> IS: 0163-1829
<> DT: Note
<> AB: Phonon frequencies and potentials for an array of thin
<> rectangular GaAs wires embedded in AlAs are calculated within a
<> microscopic scheme. The confined and interface character of
<> optical modes are clearly evident from their dispersion and
<> from the spatial profiles. Our results allow us to conclude
<> that macroscopic models based on the dielectric continuum
<> scheme are adequate to describe confined phonon profiles at
<> wave vectors relevant to el-ph scattering, in contrast with
<> approaches based on mechanical boundary conditions, which yield
<> modes with the wrong symmetry sequence. The implications for
<> electron-phonon scattering rates are discussed.
<> KP: SCATTERING, MODES
<>
<> (2) TI: ELECTRON INTERSUBBAND RELAXATION IN DOPED QUANTUM-WELLS
<> AU: SOTIRELIS_P, VONALLMEN_P, HESS_K
<> NA: UNIV ILLINOIS,DEPT PHYS,URBANA,IL,61801
<> UNIV ILLINOIS,BECKMAN INST,URBANA,IL,61801
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1993, Vol.47, No.19,
<> pp.12744-12753
<> IS: 0163-1829
<> AB: The intersubband relaxation time of an electron is calculated
<> by considering electron-electron and electron-phonon (bulk LO
<> phonon) scattering in a GaAs quantum well. The relaxation time
<> is derived and numerically evaluated within the random-phase
<> approximation with full multiple subband and frequency-
<> dependent screening. The electron scattering due to the coupled
<> system of electrons and phonons is compared with the decoupled
<> scattering where both electron-electron and unscreened
<> electron-phonon scattering are considered separately. It is
<> shown that the intersubband relaxation time is heavily
<> influenced by the electron density in the well. It is also
<> shown that at room temperature it is necessary to use the
<> finite-temperature dielectric function to accurately determine
<> the intersubband relaxation time.
<> KP: OPTICAL-PHONON INTERACTION, SEMICONDUCTOR, SCATTERING,
<> HETEROSTRUCTURES, SYSTEMS, QUASIPARTICLE, EXCITATIONS,
<> TRANSPORT, LAYERS, GAS
<>
<> (3) TI: IMPORTANCE OF CONFINED LONGITUDINAL OPTICAL PHONONS IN
<> INTERSUBBAND AND BACKWARD SCATTERING IN RECTANGULAR ALGAAS/GAAS
<> QUANTUM WIRES
<> AU: JIANG_W, LEBURTON_JP
<> NA: UNIV ILLINOIS,BECKMAN INST ADV SCI & TECHNOL,URBANA,IL,60801
<> JN: JOURNAL OF APPLIED PHYSICS, 1993, Vol.74, No.3, pp.2097-2099
<> IS: 0021-8979
<> DT: Note
<> AB: The important role of confined longitudinal optical (LO) and
<> surface optical (SO) phonons is investigated for different
<> types of individual scattering processes in AlGaAs/GaAs quantum
<> wires. Electron wave function tailing due to finite barrier
<> height has been properly taken into account. We demonstrate
<> that for highly confined wires structures L(y) = L(z) = 40
<> angstrom, forward and backward scattering are dominated by SO
<> phonons. For 80 angstrom x 80 angstrom structures, forward
<> scattering is still predominately by SO phonons while backward
<> scattering is dominated by confined LO phonons. Finally, for
<> 150 angstrom x 150 angstrom, confined phonons control both
<> forward and backward scattering. However, we demonstrate that
<> confined LO phonons play a dominant role in intersubband
<> transitions even in highly confined structures, and that it has
<> the most significant effect on the backward scattering in
<> quantum wires of L(y) = L(z) > 80 angstrom.
<> KP: CARRIER CAPTURE, HETEROSTRUCTURES
<>
<> (4) TI: CONFINED AND INTERFACE-PHONON SCATTERING IN FINITE BARRIER
<> GAAS/ALGAAS QUANTUM WIRES
<> AU: JIANG_W, LEBURTON_JP
<> NA: UNIV ILLINOIS,BECKMAN INST ADV SCI & TECHNOL,URBANA,IL,61801
<> JN: JOURNAL OF APPLIED PHYSICS, 1993, Vol.74, No.3, pp.1652-1659
<> IS: 0021-8979
<> AB: We report on the calculation of the total scattering rate in
<> finite barrier GaAs/AlGa.As quantum wires based on the
<> interaction Hamiltonian of confined longitudinal optical (LO)
<> phonon and surface (SO) phonon modes. With multisubband
<> processes being properly taken into account, our calculation
<> indicates that for GaAs type of phonons the high-frequency
<> symmetric (s+) branch plays an important role among all the
<> other SO phonon branches; it can even dominate over confined LO
<> phonons in highly confined quantum wires as observed by K. W.
<> Kim, M. A. Stroscio, A. Bhatt, R. Mickevicius, and V. V. Mitin
<> [J. Appl. Phys. 70, 319 (1991)]. Our results also demonstrate
<> that the total contributions of confined LO and SO phonon
<> scattering resemble closely to GaAs bulk LO phonon scattering.
<> Selection rules between intersubband transitions for SO modes
<> suggest the possibility of a bottle-neck effect for carrier
<> relaxation in square wires compared with rectangular wires.
<> KP: ONE-DIMENSIONAL STRUCTURES, ELECTRON-GAS, DOUBLE
<> HETEROSTRUCTURES, MODES, SUPERLATTICES, CARRIERS, RATES, GAAS
<>
<> (5) TI: NUMERICAL-SIMULATION OF ELECTRON-TRANSPORT IN MESOSCOPIC
<> STRUCTURES WITH WEAK DISSIPATION
<> AU: REGISTER_LF, HESS_K
<> NA: UNIV ILLINOIS,BECKMAN INST,URBANA,IL,61801
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1994, Vol.49, No.3,
<> pp.1900-1907
<> IS: 0163-1829
<> AB: A numerical method for simulating transient through steady-
<> state electron transport in multidimensional mesoscopic
<> structures in the presence of weak electron-phonon interactions
<> is presented. This method allows both visualization and
<> quantitative analysis of such electron-phonon coupling
<> processes in these structures. To allow simulation of quantum
<> interference effects within multidimensional structures, a
<> previously developed method for simulating dissipationless
<> transport based on the time-dependent Schrodinger equation is
<> used as a starting point. Then, to allow simulation of the
<> effects of electron-phonon coupling yet retain numerical
<> tractability, a limited number of discretized harmonic
<> oscillator degrees of freedom are added to those of the
<> electron. Coupling between the electron and oscillator degrees
<> of freedom is via Monte Carlo sampled potential functions that
<> are obtained rom the true electron-phonon coupling potentials.
<> The method is exact to first order in the coupling and models
<> some higher order coupling processes as well. Example
<> simulations are performed for both real emission of polar-
<> optical phonons and self-energy processes in prototypical
<> mesoscopic structures.
<> KP: OPTICAL-PHONON-SCATTERING, HETEROSTRUCTURES, SEMICONDUCTORS,
<> CARRIERS
<>
<> (6) TI: BREAKDOWN OF THERMIONIC EMISSION THEORY FOR QUANTUM-WELLS
<> AU: TSAI_CY, EASTMAN_LF, LO_YH, TSAI_CY
<> NA: CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY,14853
<> CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY,14853
<> UNIV STUTTGART,INST PHYS 4,D-70550 STUTTGART,GERMANY
<> JN: APPLIED PHYSICS LETTERS, 1994, Vol.65, No.4, pp.469-471
<> IS: 0003-6951
<> AB: Carriers escape from quantum wells into barriers via carrier-
<> polar optical phonon absorption is theoretically studied in
<> multisubband quantum well structures. We find that carriers in
<> each subband have their own minimum escape time when the energy
<> difference between the band edges of the subband and the
<> barrier matches the energy of a longitudinal optical phonon.
<> Compared to the calculations from classical thermionic emission
<> theory, we find that the thermionic emission theory is no
<> longer valid when the width or the depth of quantum wells is
<> small.
<> KP: ELECTRON-PHONON INTERACTION, SCATTERING
<>
<> (7) TI: ELECTRON-OPTICAL PHONON-SCATTERING RATES IN 2D STRUCTURES -
<> EFFECTS OF INDEPENDENT ELECTRON AND PHONON CONFINEMENT
<> AU: POZELA_J, BUTKUS_G, JUCIENE_V
<> NA: ICSC WORLD LAB,SEMICOND PHYS INST,GOSTAUTO 11,VILNIUS,LITHUANIA
<> JN: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, Vol.9, No.8,
<> pp.1480-1483
<> IS: 0268-1242
<> AB: Two-dimensional structures with different thicknesses of
<> confined optical phonon and electron quantum wells are
<> proposed. The confined electron-polar optical phonon scattering
<> rates in these structures when an electron quantum well is
<> localized inside a phonon one are calculated. The independent
<> electron and phonon confinement allows the scattering rates by
<> confined and interface phonons to change significantly. The
<> effect of independent electron and phonon confinement is
<> demonstrated for an AlAs/GaAs/AlAs structure.
<> KP: QUANTUM-WELLS, SUPERLATTICES, HETEROSTRUCTURES
<>
<> (8) TI: CARRIER CAPTURE AND ESCAPE IN MULTISUBBAND QUANTUM-WELL LASERS
<> AU: TSAI_CY, EASTMAN_LF, LO_YH, TSAI_CY
<> NA: CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY,14853
<> CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY,14853
<> UNIV STUTTGART,INST PHYS 4,D-70550 STUTTGART,GERMANY
<> JN: IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, Vol.6, No.9, pp.1088-
<> 1090
<> IS: 1041-1135
<> AB: Carrier capture and escape processes between quantum wells and
<> barriers via carrier-polar optical phonon interactions are
<> theoretical studied in multisubband quantum well structures. We
<> find that carriers in each subband have their own minimum
<> capture and escape times when the energy difference between the
<> band edges of the subbands and the barrier is equal to the
<> energy of a longitudinal optical phonon. Our results indicate
<> that carrier escape time is more quantum well structure-
<> dependent while carrier capture time is less structure-
<> dependent. Explicit forms for calculating carrier capture and
<> escape times are given which are crucial for designing the
<> quantum well structures with optimal capture or escape
<> efficiencies.
<> KP: PHONON SCATTERING, HETEROSTRUCTURES
<>
<> (9) TI: CARRIER ENERGY RELAXATION IN MULTISUBBAND QUANTUM-WELL LASERS
<> WITH HOT PHONON EFFECTS
<> AU: TSAI_CY, EASTMAN_LF, LO_YH, TSAI_CY
<> NA: CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY,14853
<> CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY,14853
<> UNIV STUTTGART,INST PHYS 4,D-70550 STUTTGART,GERMANY
<> JN: JOURNAL OF APPLIED PHYSICS, 1994, Vol.76, No.9, pp.5334-5338
<> IS: 0021-8979
<> AB: Carrier energy relaxation rates via carrier-polar optical-
<> phonon interactions with hot phonon effects are theoretically
<> studied in multisubband quantum well structures. The effects of
<> changing the width and depth of quantum wells on the carrier
<> energy relaxation rate are discussed. Compared to the result of
<> the bulk, we find that the difference in the energy relaxation
<> rate between quantum wells and bulk is rather small. Reducing
<> the lifetime of longitudinal-optical phonons will effectively
<> enhance the carrier energy relaxation rate. The implications in
<> designing high-speed quantum well lasers are also suggested.
<> KP: SCATTERING
<>
<> (10) TI: ULTRAFAST RELAXATION OF PHOTOEXCITED CARRIERS IN SEMICONDUCTOR
<> QUANTUM WIRES - A MONTE-CARLO APPROACH
<> AU: ROTA_L, ROSSI_F, LUGLI_P, MOLINARI_E
<> NA: UNIV OXFORD,DEPT PHYS,CLARENDON LAB,PARKS RD,OXFORD OX1
<> 3PU,ENGLAND
<> UNIV MARBURG,FACHBEREICH PHYS,D-35032 MARBURG,GERMANY
<> UNIV MARBURG,ZENTRUM MAT WISSENSCH,D-35032 MARBURG,GERMANY
<> UNIV ROMA TOR VERGATA,DIPARTIMENTO INGN ELETTR,I-00133
<> ROME,ITALY
<> UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1995, Vol.52, No.7,
<> pp.5183-5201
<> IS: 0163-1829
<> AB: A detailed analysis of the cooling and thermalization process
<> for photogenerated carriers in semiconductor quantum wires is
<> presented. The energy relaxation of the nonequilibrium carrier
<> distribution is investigated for the ''realistic'' case of a
<> rectangular multisubband quantum-wire structure. By means of a
<> direct ensemble Monte Carlo simulation of both the carrier and
<> the phonon dynamics, all the nonlinear phenomena relevant for
<> the relaxation process, such as carrier-carrier interaction,
<> hot-phonon effects, and degeneracy, are investigated. The
<> results of these simulated experiments show a significant
<> reduction of the carrier-relaxation process compared to the
<> bulk case, which is mainly due to the reduced efficiency of
<> carrier-carrier scattering; on the contrary, the role of hot-
<> phonon effects and degeneracy seems to be not so different from
<> that played in bulk semiconductors.
<> KP: OPTICAL-PHONON-SCATTERING, ELECTRON-ELECTRON SCATTERING,
<> THERMALIZATION, SUPERLATTICES, TRANSPORT, DYNAMICS, WELLS,
<> HETEROSTRUCTURES, SIMULATION, INVERSION
<>
<> (11) TI: REDUCTION OF ELECTRON-OPTICAL PHONON-SCATTERING RATES IN A
<> QUANTUM-WELL WITH A PHONON WALL
<> AU: POZELA_J, JUCIENE_V, POZELA_K
<> NA: LITHUANIA ACAD SCI,INST SEMICOND PHYS,ICSC,WORLD LAB,LITHUANIAN
<> BRANCH,GOSTAUTO 11,VILNIUS 232600,LITHUANIA
<> JN: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, Vol.10, No.12,
<> pp.1555-1560
<> IS: 0268-1242
<> AB: The intrasubband electron-polar optical phonon scattering rates
<> for interface and confined phonons are calculated. The
<> AlAs/GaAs/AlAs double heterostructures with independent
<> confinement of electrons and phonons as well as structures
<> containing a phonon wall (a phonon-reflecting barrier
<> transparent to electrons) embedded in an electron quantum well
<> (QW) are considered. It is shown that, because of the
<> independent electron and phonon confinement in the double
<> heterostructure, the scattering rate is lower than that
<> obtained in the case of electron confinement alone. The total
<> scattering rate by confined and interface phonons in the QW
<> with a phonon wall is reduced significantly as compared with
<> the rate of confined electron scattering by bulk phonons. Thus,
<> the phonon wall within the electron QW is a powerful means of
<> reducing electron scattering and enhancing, correspondingly,
<> the electron mobility in two-dimensional (2D) heterostructures.
<>
<> (12) TI: HEAVY-HOLE SCATTERING BY CONFINED NONPOLAR OPTICAL PHONONS IN A
<> SINGLE SI1-XGEX/SI QUANTUM-WELL
<> AU: SUN_G, FRIEDMAN_L
<> NA: UNIV MASSACHUSETTS,ENGN PROGRAM,BOSTON,MA,02125
<> ROME LAB,EROC,BEDFORD,MA,01731
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1996, Vol.53, No.7,
<> pp.3966-3974
<> IS: 0163-1829
<> AB: Intrasubband and intersubband scattering rates of heavy holes
<> are obtained due to confined nonpolar optical phonons in a Si1-
<> xGex quantum well with Si barriers. Guided and interface Ge-Si
<> and Ge-Ge modes and unconfined Si-Si modes are considered. A
<> continuum model is used for the two components of the ionic
<> displacement of confined vibrations: the uncoupled s-polarized
<> TO mode and the hybrid of the LO and p-polarized TO modes. The
<> guided mode is obtained using the model of a quantum well with
<> infinitely rigid barriers and the interface mode is derived
<> from the hydrodynamic boundary conditions. While the total
<> intersubband scattering rates are reduced as a result of
<> confinement, the opposite is found for the intrasubband
<> scattering. Depending on the well width and Ge content, the
<> intersubband scattering rates are reduced by a factor of 2-4
<> with respect to their values for no confinement. Thus one would
<> expect comparable enhancement in the intersubband lifetimes
<> crucial to the population inversion in a Si1-xGex/Si
<> intersubband laser.
<> KP: GAAS-ALAS SUPERLATTICES, SEMICONDUCTOR HETEROSTRUCTURES,
<> ELECTRON, MODES
<>
<> (13) TI: Polaron effects in asymmetric semiconductor quantum-well
<> structures
<> AU: Shi_JJ, Zhu_XQ, Liu_ZX, Pan_SH, Li_XY
<> NA: HENAN NORMAL UNIV,DEPT PHYS,XINXIANG 453002,HENAN,PEOPLES R
<> CHINA
<> CHINA CTR ADV SCI & TECHNOL,WORLD LAB,BEIJING 100080,PEOPLES R
<> CHINA
<> CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA
<> JN: PHYSICAL REVIEW B-CONDENSED MATTER, 1997, Vol.55, No.7,
<> pp.4670-4679
<> IS: 0163-1829
<> AB: In this paper, polaron effects in asymmetric quantum-well
<> structures (QW's) are investigated by using second-order
<> perturbation theory and the modified Lee-Low-Pines (LLP)
<> variational method. By applying the Green's-function method,
<> explicit analytical expressions for the electron extended-state
<> wave functions and the density of states in a general step QW's
<> are given. Within the framework of second-order perturbation
<> theory, the ground-state polaron binding energy and effective
<> mass in step and asymmetric single QW's are studied as due to
<> the interface optical phonons, confined bulklike LO and half-
<> space LO phonons. The full energy spectrum is included in our
<> calculations. The effects of the finite electronic confinement
<> potential and the subband nonparabolicity are also considered.
<> The relative importance of the different phonon modes is
<> analyzed. By means of the modified LLP variational method, the
<> binding energy of a polaron confined to asymmetric single QW's
<> is also investigated. Our results show that in ordinary
<> asymmetric QW's, the asymmetry of the QW's has a significant
<> influence on the polaron effect, which has a close relationship
<> to the interface phonon dispersion. When the well width and one
<> side barrier height of asymmetric single QW's are fixed and
<> identical with those of symmetric QW's, the polaron binding
<> energy in asymmetric QW's is always smaller than that in
<> symmetric QW's. We have also found that it is necessary to
<> include the continuum energy spectrum as intermediate states in
<> the perturbation calculations in order to obtain the correct
<> results; the subband nonparabolicity has a small influence on
<> the polaron effect. Comparing our results obtained by using two
<> different methods, good agreement is found.
<> KP: INTERFACE-PHONON INTERACTION, MAGNETIC-FIELD, CYCLOTRON-
<> RESONANCE, BOUND POLARON, CRYSTAL SLAB, SELF-ENERGY, ELECTRON,
<> SCATTERING, MAGNETOPOLARON, SINGLE
<>
<> (14) TI: Simulation of carrier capture in semiconductor quantum wells:
<> Bridging the gap from quantum to classical transport
<> AU: Register_LF, Hess_K
<> NA: UNIV ILLINOIS,BECKMAN INST,URBANA,IL,61801
<> UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL,61801
<> JN: APPLIED PHYSICS LETTERS, 1997, Vol.71, No.9, pp.1222-1224
<> IS: 0003-6951
<> AB: The effects of lost phase coherence on carrier capture by
<> semiconductor quantum wells are simulated using Schrodinger
<> Equation Monte Carlo. Results are shown for polar-optical-
<> phonon-induced capture of both electrons and holes, and for
<> both monoenergetic and thermal distributions of incident charge
<> carriers. Results suggest that semiclassical modeling of hole
<> capture may be sufficient, provided that quantum mechanical
<> reflection from the individual heterointerfaces still is taken
<> into account, However, for a quantum well laser optimized to
<> operate at an electron capture resonance, semiclassical
<> calculations blind to the resonance structure would
<> underestimate the capture rate, while Golden-Rule calculations,
<> which assume complete phase coherence, could somewhat
<> overestimate it. (C) 1997 American Institute of Physics.
<>
<> **** End of Data ****
<>
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