Hot-hole lasers in III-V materials.

P. Kinsler, W.Th. Wenckebach

    Department of Applied Physics,
    Faculty of Applied Sciences,
    T.U. Delft, 
    Lorentzweg 1,
    2628 CJ Delft,
    The Netherlands.

J. Appl. Phys. 90, 1692 (2001). 

Following the success of p-Ge hot-hole lasers, there is also
potential for using other materials, notably III-V's such as
GaAs and InSb.  Our investigations of the optimum field
directions and polarizations in bulk p-GaAs lead us to
recommend particular field directions to get optimum gain. 
These orientations could then be used in the layer design of
quantum-well hot-hole lasers.  More importantly, we show that
simple measures of hot-hole laser potential, such as the
effective mass ratio, are not always reliable.  We present
Monte Carlo results for GaAs and InSb, reporting gain and gain
bandwidth as a function of field strength and laser frequency,
while considering both field orientations, and photon
polarization.  Comparisons are made with bulk p-Ge systems.  

Email: Dr.Paul.Kinsler@physics.org